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? semiconductor components industries, llc, 2015 may, 2015 ? rev. 2 1 publication order number: ncv8170/d ncv8170 ultra\low i q 150 ma cmos ldo regulator the ncv8170 series of cmos low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current. the ultra-low consumption of typ. 500 na ensures long battery life and dynamic transient boost feature improves device transient response for wireless communication applications. the device is available in small 1 1 mm xdfn4 and sot?563 packages. features ? operating input voltage range: 2.2 v to 5.5 v ? output voltage range: 1.2 v to 3.6 v (0.1 v steps) ? ultra-low quiescent current typ. 0.5 a ? low dropout: 170 mv typ. at 150 ma ? high output voltage accuracy 1% ? stable with ceramic capacitors 1 f ? over-current protection ? thermal shutdown protection ? ncv8170a for active discharge option ? available in small 1 1 mm xdfn4 and sot?563 packages ? these are pb-free devices typical applications ? battery powered equipments ? portable communication equipments ? cameras, image sensors and camcorders figure 1. typical application schematic ncv8170 in en out v in v out 1 f1 f c out c in gnd www. onsemi.com xdfn4 mx suffix case 711aj marking diagrams see detailed ordering, marking and shipping information on page 18 of this data sheet. ordering information 1 xx = specific device code m = date code xx m 1 xdfn4 xx = specific device code m = month code = pb?free package xx m 1 6 1 sot?563 sot?563 xv suffix case 463a
ncv8170 www. onsemi.com 2 pin function description pin no. xdfn4 pin no. sot?563 pin name description 4 1 in power supply input voltage 2 2 gnd power supply ground 3 6 en chip enable pin (active ?h?) 1 3 out output pin epad epad internally connected to gnd 4 nc no connect 5 gnd power supply ground absolute maximum ratings symbol rating value unit v in input voltage (note 1) 6.0 v v out output voltage ?0.3 to v in + 0.3 v v ce chip enable input ?0.3 to 6.0 v t j(max) maximum junction temperature 125 c t stg storage temperature ?55 to 150 c esd hbm esd capability, human body model (note 2) 2000 v esd mm esd capability, machine model (note 2) 200 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristics and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per aec-q100-002 (eia/jesd22-a114) esd machine model tested per aec-q100-003 (eia/jesd22-a115) latchup current maximum rating tested per jedec standard: jesd78 thermal characteristics symbol rating value unit r ja thermal characteristics, thermal resistance, junction-to-air xdfn4 1 1mm sot?563 250 200 c/w figure 2. simplified block diagram
ncv8170 www. onsemi.com 3 electrical characteristics ? voltage version 1.2 v (?40 c t j 125 c; v in = 2.5 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 3) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 1.188 1.2 1.212 v ?40 c t j 125 c 1.176 1.2 1.224 line reg line regulation 2.5 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 2.5 v ?20 1 20 mv v do dropout voltage (note 4) ? ? ? mv i out output current (note 5) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 225 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pin current v en v in 5.5 v (note 6) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 2.2 v + 200 mvpp modulation i out = 150 ma i out = 10 ma ? ? 57 63 ? ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma, f = 100 hz to 1 mhz, c out = 1 f ? 85 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 6) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 6) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 6) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 3. performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 4. not characterized at v in = 2.2 v, v out = 1.2 v, i out = 150 ma. 5. respect soa. 6. guaranteed by design and characterization.
ncv8170 www. onsemi.com 4 electrical characteristics ? voltage version 1.5 v (?40 c t j 125 c; v in = 2.5 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 7) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 1.485 1.5 1.515 v ?40 c t j 125 c 1.470 1.5 1.530 line reg line regulation 4.3 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 4.3 v ?20 ? 20 mv v do dropout voltage i out = 150 ma (note 8) ? ? ? mv i out output current (note 9) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 225 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pin current v en v in 5.5 v (note 10) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 2.5 v + 200 mvpp modulation i out = 150 ma ? 57 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma, f = 100 hz to 1 mhz, c out = 1 f ? 90 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 10) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 10) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 10) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 7. performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 8. not characterized at v in = 2.2 v, v out = 1.5 v, i out = 150 ma. 9. respect soa. 10. guaranteed by design and characterization.
ncv8170 www. onsemi.com 5 electrical characteristics ? voltage version 1.8 v (?40 c t j 125 c; v in = 2.8 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 11) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 1.782 1.8 1.818 v ?40 c t j 125 c 1.764 1.8 1.836 line reg line regulation 2.8 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 2.8 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 12) ? 350 500 mv i out output current (note 13) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 225 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 14) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 2.8 v + 200 mvpp modulation i out = 150 ma ? 57 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 95 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 14) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 14) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 14) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 11. performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 12. characterized when v out falls 54 mv below the regulated voltage and only for devices with v out = 1.8 v. 13. respect soa. 14. guaranteed by design and characterization.
ncv8170 www. onsemi.com 6 electrical characteristics ? voltage version 2.5 v (?40 c t j 125 c; v in = 3.5 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 15) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 2.475 2.5 2.525 v ?40 c t j 125 c 2.450 2.5 2.550 line reg line regulation 3.5 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 3.5 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 16) ? 240 350 mv i out output current (note 17) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 225 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 18) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 3.5 v + 200 mvpp modulation i out = 150 ma ? 57 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 125 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 18) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 18) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 18) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 15.performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 16. characterized when v out falls 75 mv below the regulated voltage and only for devices with v out = 2.5 v. 17. respect soa. 18. guaranteed by design and characterization.
ncv8170 www. onsemi.com 7 electrical characteristics ? voltage version 2.8 v (?40 c t j 125 c; v in = 3.8 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 19) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 2.772 2.8 2.828 v ?40 c t j 125 c 2.744 2.8 2.856 line reg line regulation 3.8 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 3.8 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 20) ? 210 315 mv i out output current (note 21) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 195 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 22) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 3.8 v + 200 mvpp modulation i out = 150 ma ? 40 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 125 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 22) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 22) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 22) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 19.performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 20. characterized when v out falls 84 mv below the regulated voltage and only for devices with v out = 2.8 v. 21. respect soa. 22. guaranteed by design and characterization.
ncv8170 www. onsemi.com 8 electrical characteristics ? voltage version 3.0 v (?40 c t j 125 c; v in = 4.0 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 23) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 2.97 3.0 3.03 v ?40 c t j 125 c 2.94 3.0 3.06 line reg line regulation 4.0 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 4 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 24) ? 190 260 mv i out output current (note 25) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 195 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 26) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 4.0 v + 200 mvpp modulation i out = 150 ma ? 47 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 120 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 26) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 26) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 26) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 23.performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 24. characterized when v out falls 90 mv below the regulated voltage and only for devices with v out = 3.0 v. 25. respect soa. 26. guaranteed by design and characterization.
ncv8170 www. onsemi.com 9 electrical characteristics ? voltage version 3.3 v (?40 c t j 125 c; v in = 4.3 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 27) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 3.267 3.3 3.333 v ?40 c t j 125 c 3.234 3.3 3.366 line reg line regulation 4.3 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 4.3 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 28) ? 180 250 mv i out output current (note 29) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 195 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 30) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 4.3 v + 200 mvpp modulation i out = 150 ma ? 41 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 125 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 30) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 30) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 30) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 27.performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 28. characterized when v out falls 99 mv below the regulated voltage and only for devices with v out = 3.3 v. 29. respect soa. 30. guaranteed by design and characterization.
ncv8170 www. onsemi.com 10 electrical characteristics ? voltage version 3.6 v (?40 c t j 125 c; v in = 4.6 v; i out = 1 ma, c in = c out = 1.0 f, unless otherwise noted. typical values are at t a = +25 c.) (note 31) symbol parameter test conditions min typ max unit v in operating input voltage 2.2 ? 5.5 v v out output voltage t a = +25 c 3.564 3.6 3.636 v ?40 c t j 125 c 3.528 3.6 3.672 line reg line regulation 4.6 v < v in 5.5 v, i out = 1 ma ? 0.05 0.20 %/v load reg load regulation 0 ma < i out 150 ma, v in = 4.6 v ?20 1 20 mv v do dropout voltage i out = 150 ma (note 32) ? 170 240 mv i out output current (note 33) 150 ? ? ma i sc short circuit current limit v out = 0 v ? 195 ? ma i q quiescent current i out = 0 ma ? 0.5 0.9 a i stb standby current v en = 0 v, t j = 25 c ? 0.1 0.5 a v enh en pin threshold voltage en input voltage ?h? 1.2 ? ? v v enl en pin threshold voltage en input voltage ?l? ? ? 0.4 v i en en pull down current v en v in 5.5 v (note 34) ? 10 ? na psrr power supply rejection ratio f = 1 khz, v in = 4.6 v + 200 mvpp modulation i out = 150 ma ? 30 ? db v noise output noise voltage v in = 5.5 v, i out = 1 ma f = 100 hz to 1 mhz, c out = 1 f ? 130 ? v rms r low active output discharge resistance (a option only) v in = 5.5 v, v en = 0 v (note 34) ? 100 ? t sd thermal shutdown temperature temperature increasing from t j = +25 c (note 34) ? 175 ? c t sdh thermal shutdown hysteresis temperature falling from t sd (note 34) ? 25 ? c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 31.performance guaranteed over the indicated operating temperature range by design and/ or characterization production tested at t j =t a =25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 32. characterized when v out falls 108 mv below the regulated voltage and only for devices with v out = 3.6 v. 33. respect soa. 34. guaranteed by design and characterization. typical characteristics figure 3. output voltage vs. temperature, vout = 1.2 v figure 4. output voltage vs. temperature, vout = 1.8 v temperature ( c) temperature ( c) 80 60 40 20 0 ?20 ?40 1.190 1.192 1.194 1.196 1.198 1.200 1.202 80 60 40 20 0 ?20 ?40 1.790 1.792 1.794 1.796 1.798 1.800 1.802 output voltage (v) output voltage (v) vin = 5.5 v vin = 3.0 v vin = 2.2 v vin = 5.5 v vin = 3.5 v vin = 2.8 v ncv8170xxx120tyg cin = cout = 1 f iout = 1 ma ncv8170xxx180tyg cin = cout = 1 f iout = 1 ma 100 120 100 120
ncv8170 www. onsemi.com 11 typical characteristics figure 5. output voltage vs. temperature, vout = 3.0 v figure 6. output voltage vs. temperature, vout = 3.6 v temperature ( c) temperature ( c) 100 60 40 20 0 ?20 ?40 2.984 2.988 2.992 2.996 3.000 3.004 3.008 80 60 40 20 0 ?20 ?40 3.580 3.584 3.588 3.592 3.596 3.600 3.604 figure 7. output voltage vs. output current, vout = 1.2 v figure 8. output voltage vs. output current, vout = 1.8 v output current (ma) output current (ma) 140 120 100 80 60 40 20 0 1.194 1.195 1.196 1.197 1.198 1.199 1.200 140 120 100 80 60 40 20 0 1.790 1.792 1.794 1.796 1.798 1.800 1.802 figure 9. output voltage vs. output current, vout = 3.0 v figure 10. output voltage vs. output current, vout = 3.6 v output current (ma) output current (ma) 140 120 100 80 60 40 20 0 2.996 2.997 2.998 2.999 3.000 3.001 3.002 140 120 100 80 60 40 20 0 3.593 3.594 3.595 3.596 3.597 3.598 3.599 output voltage (v) output voltage (v) output voltage (v) output voltage (v) output voltage (v) output voltage (v) vin = 5.5 v vin = 5.0 v vin = 3.3 ? 4.5 v ncv8170xxx300tyg cin = cout = 1 f iout = 1 ma vin = 5.5 v vin = 5.0 v ncv8170xxx360tyg cin = cout = 1 f iout = 1 ma vin = 3.8 ? 4.5 v vin = 5.5 v vin = 4.0 v ncv8170xxx120tyg cin = cout = 1 f t a = 25 c vin = 3.0 v vin = 2.5 v vin = 5.5 v vin = 4.5 v ncv8170xxx180tyg cin = cout = 1 f t a = 25 c vin = 4.0 v vin = 2.8 v vin = 5.5 v vin = 5.0 v ncv8170xxx300tyg cin = cout = 1 f t a = 25 c vin = 4.5 v vin = 4.0 v vin = 5.5 v vin = 5.0 v ncv8170xxx360tyg cin = cout = 1 f t a = 25 c vin = 4.6 v vin = 4.3 v 80 120 100 120
ncv8170 www. onsemi.com 12 typical characteristics figure 11. dropout voltage vs. output current, vout = 1.8 v figure 12. dropout voltage vs. output current, vout = 2.5 v output current (ma) output current (ma) 140 120 100 80 60 40 20 0 0 200 300 500 140 120 100 80 60 40 20 0 0 50 100 150 200 250 350 figure 13. dropout voltage vs. output current, vout = 3.0 v figure 14. dropout voltage vs. output current, vout = 3.6 v output current (ma) output current (ma) 140 120 100 80 60 40 20 0 0 50 100 150 200 300 140 120 100 80 60 40 20 0 0 50 150 200 250 figure 15. quiescent current vs. temperature, vout = 1.2 v figure 16. quiescent current vs. temperature, vout = 2.5 v temperature ( c) temperature ( c) 80 60 40 20 0 ?20 ?40 0.35 0.40 0.45 0.50 0.55 0.60 0.65 80 60 40 20 0 ?20 ?40 0.35 0.40 0.45 0.50 0.55 0.60 0.65 dropout voltage (mv) dropout voltage (mv) dropout voltage (mv) dropout voltage (mv) quiescent current ( a) quiescent current ( a) t a = 25 c ncv8170xxx180tyg cin = cout = 1 f t a = 125 c t a = ?40 c 100 t a = 25 c ncv8170xxx250tyg cin = cout = 1 f t a = 125 c t a = ?40 c t a = 25 c ncv8170xxx300tyg cin = cout = 1 f t a = 125 c t a = ?40 c t a = 25 c ncv8170xxx360tyg cin = cout = 1 f t a = 125 c t a = ?40 c 100 vin = 5.5 v vin = 5.0 v vin = 2.5 ? 4.0 v ncv8170xxx120tyg cin = cout = 1 f iout = 0 vout = 1.2 v vin = 5.5 v vin = 5.0 v vin = 3.5 ? 4.0 v ncv8170xxx250tyg cin = cout = 1 f iout = 0 vout = 2.5 v 400 300 250 100 120 100 120
ncv8170 www. onsemi.com 13 typical characteristics figure 17. quiescent current vs. temperature, vout = 3.6 v figure 18. ground current vs. output current, vout = 1.2 v temperature ( c) output current (ma) 100 60 40 20 0 ?20 ?40 0.35 0.40 0.45 0.50 0.55 0.60 0.65 100 10 1 0.1 0.01 0 10 20 30 40 50 60 70 figure 19. ground current vs. output current, vout = 2.5 v figure 20. ground current vs. output current, vout = 3.6 v output current (ma) output current (ma) 100 10 1 0.1 0.01 0 10 20 30 40 50 70 80 100 10 1 0.1 0.01 0 10 20 30 50 60 70 80 figure 21. psrr vs. frequency, vout = 1.2 v figure 22. psrr vs. frequency, vout = 1.8 v frequency (hz) frequency (hz) 1m 100k 10k 1k 100 0 10 20 30 50 60 70 80 1m 100k 10k 1k 100 0 10 20 30 50 60 70 80 quiescent current ( a) ground current ( a) ground current ( a) ground current ( a) psrr (db) psrr (db) vin = 5.5 v vin = 5.0 v ncv8170xxx360tyg cin = cout = 1 f iout = 0 vout = 3.6 v vin = 4.0 v vin = 5.5 v vin = 2.5 v ncv8170xxx120tyg cin = cout = 1 f t a = 25 c vout = 1.2 v vin = 3.5 v vin = 5.5 v vin = 3.5 v ncv8170xxx250tyg cin = cout = 1 f t a = 25 c vout = 2.5 v vin = 4.5 v 60 40 vin = 5.5 v vin = 4.6 v ncv8170xxx360tyg cin = cout = 1 f t a = 25 c vout = 3.6 v vin = 5.0 v iout = 1 ma 10 ma 150 ma 100 ma 40 ncv8170xxx120tyg cout = 1 f vin = 2.2 v+ 200 mvpp modulation t a = 25 c vout = 1.2 v iout = 1 ma 10 ma 150 ma 100 ma ncv8170xxx180tyg cout = 1 f vin = 2.8 v+ 200 mvpp modulation t a = 25 c vout = 1.8 v 40 80 120 1000 1000 1000
ncv8170 www. onsemi.com 14 typical characteristics figure 23. psrr vs. frequency, vout = 3.0 v figure 24. psrr vs. frequency, vout = 3.6 v frequency (hz) frequency (hz) 1m 100k 10k 1k 100 0 10 20 30 40 50 60 70 1m 100k 10k 1k 100 0 10 20 30 40 50 60 70 figure 25. output voltage noise spectral density, vout = 1.2 v figure 26. output voltage noise spectral density, vout = 1.8 v frequency (hz) frequency (hz) 1m 100k 10k 1k 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1m 100k 10k 1k 100 0 0.2 0.6 0.8 1.2 1.4 1.6 2.0 figure 27. output voltage noise spectral density, vout = 3.0 v figure 28. output voltage noise spectral density, vout = 3.6 v frequency (hz) frequency (hz) 1m 100k 10k 1k 100 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1m 100k 10k 1k 100 10 0 0.5 1.0 1.5 2.0 3.0 3.5 4.0 psrr (db) psrr (db) output voltage noise spectral density ( v/ hz) output voltage noise spectral density ( v/ hz) iout = 1 ma 10 ma 150 ma 100 ma ncv8170xxx300tyg cout = 1 f vin = 4.0 v+ 200 mvpp modulation t a = 25 c vout = 3.0 v iout = 1 ma 10 ma 150 ma 100 ma ncv8170xxx360tyg cout = 1 f vin = 4.6 v+ 200 mvpp modulation t a = 25 c vout = 3.6 v ncv8170xxx120tyg cin = cout = 1 f vin = 5.5 v vout = 1.2 v iout = 1 ma t a = 25 c ncv8170xxx180tyg cin = cout = 1 f vin = 5.5 v vout = 1.8 v iout = 1 ma t a = 25 c ncv8170xxx300tyg cin = cout = 1 f vin = 5.5 v vout = 3.0 v iout = 1 ma t a = 25 c ncv8170xxx360tyg cin = cout = 1 f vin = 5.5 v vout = 3.6 v iout = 1 ma t a = 25 c 0.4 1.0 1.8 2.5 output voltage noise spectral density ( v/ hz) 10 output voltage noise spectral density ( v/ hz)
ncv8170 www. onsemi.com 15 typical characteristics figure 29. load transient response at load step from 1 ma to 50 ma, vout = 1.2 v figure 30. load transient response at load step from 0.1 ma to 50 ma, vout = 1.2 v figure 31. load transient response at load step from 0.1 ma to 10 ma, vout = 1.2 v figure 32. load transient response at load step from 1 ma to 50 ma, vout = 2.5 v figure 33. load transient response at load step from 0.1 ma to 50 ma, vout = 2.5 v figure 34. load transient response at load step from 0.1 ma to 10 ma, vout = 2.5 v
ncv8170 www. onsemi.com 16 typical characteristics figure 35. load transient response at load step from 1ma to 50 ma, vout= 3.0 v figure 36. load transient response at load step from 0.1 ma to 50 ma, vout = 3.0 v figure 37. load transient response at load step from 0.1 ma to 10 ma, vout = 3.0 v figure 38. load transient response at load step from 1 ma to 50 ma, vout = 3.6 v figure 39. load transient response at load step from 0.1 ma to 50 ma, vout = 3.6 v figure 40. load transient response at load step from 0.1 ma to 10 ma, vout = 3.6 v
ncv8170 www. onsemi.com 17 applications information general the ncv8170 is a high performance 150 ma linear regulator with ultra low iq. this device delivers low noise and high power supply rejection ratio with excellent dynamic performance due to employing the dynamic quiescent current adjustment which assure ultra low i q consumption at no ? load state. these parameters make this device very suitable for various battery powered applications. input decoupling (c in ) it is recommended to connect at least a 1 f ceramic x5r or x7r capacitor between in and gnd pins of the device. this capacitor will provide a low impedance path for any unwanted ac signals or noise superimposed onto constant input voltage. the good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. higher capacitance and lower esr capacitors will improve the overall line transient response. output decoupling (c out ) the ncv8170 does not require a minimum equivalent series resistance (esr) for the output capacitor. the device is designed to be stable with standard ceramics capacitors with values of 1.0 f or greater up to 10 f. the x5r and x7r types have the lowest capacitance variations over temperature thus they are recommended. there is recommended connect the output capacitor as close as possible to the output pin of the regulator. enable operation the ncv8170 uses the en pin to enable /disable its device and to activate /deactivate the active discharge function at devices with this feature. if the en pin voltage is pulled below 0.4 v the device is guaranteed to be disable. the active discharge transistor at the devices with active discharge feature is activated and the output voltage vout is pulled to gnd through an internal circuitry with ef fective resistance about 100 ohms. if the en pin voltage is higher than 1.2 v the device is guaranteed to be enabled. the internal active discharge circuitry is switched off and the desired output voltage is available at output pin. in case the enable function is not required the en pin should be connected directly to input pin. thermal shutdown when the die temperature exceeds the thermal shutdown point (tsd = 175 c typical) the device goes to disabled state and the output voltage is not delivered until the die temperature decreases to 150 c. the thermal shutdown feature provides a protection from a catastrophic device failure at accidental overheating. this protection is not intended to be used as a substitute for proper heat sinking. power dissipation and heat sinking the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. the maximum power dissipation the ncv8170 device can handle is given by: p d(max) t j(max) t a r ja (eq. 1) the power dissipated by the ncv8170 device for given application conditions can be calculated from the following equations: p d v in i gnd (i out ) i out v in v out (eq. 2) or v in(max) p d(max) v out
i out i out i gnd (eq. 3) hints v in and gnd printed circuit board traces should be as wide as possible. when the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. place external components, especially the output capacitor, as close as possible to the ncv8170, and make traces as short as possible.
ncv8170 www. onsemi.com 18 ordering information device nominal output voltage marking active discharge package shipping ? ncv8170amx120tcg 1.2 cc yes xdfn4 1.0 x 1.0 (pb?free) 3000 / tape & reel ncv8170amx150tcg 1.5 cj ncv8170amx180tcg 1.8 cd ncv8170amx250tcg 2.5 ce ncv8170amx280tcg 2.8 cf ncv8170amx300tcg 3.0 ca ncv8170amx330tcg 3.3 cg ncv8170amx360tcg 3.6 cm ncv8170bmx120tcg 1.2 3c no ncv8170bmx150tcg 1.5 3j ncv8170bmx180tcg 1.8 3d ncv8170bmx250tcg 2.5 3e ncv8170bmx280tcg 2.8 3f NCV8170BMX300TCG 3.0 3a ncv8170bmx330tcg 3.3 3g ncv8170bmx360tcg 3.6 3m ncv8170axv120t2g 1.2 cc yes sot ? 563 (pb?free) ncv8170axv150t2g 1.5 cj ncv8170axv180t2g 1.8 cd ncv8170axv250t2g 2.5 ce ncv8170axv280t2g 2.8 cf ncv8170axv300t2g 3.0 ca ncv8170axv330t2g 3.3 cg ncv8170axv360t2g 3.6 cm ncv8170bxv120t2g 1.2 3c no ncv8170bxv150t2g 1.5 3j ncv8170bxv180t2g 1.8 3d ncv8170bxv250t2g 2.5 3e ncv8170bxv280t2g 2.8 3f ncv8170bxv300t2g 3.0 3a ncv8170bxv330t2g 3.3 3g ncv8170bxv360t2g 3.6 3n ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncv8170 www. onsemi.com 19 package dimensions h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches sot?563, 6 lead case 463a?01 issue f e m 0.08 (0.003) x b 6 5 pl a c ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007
ncv8170 www. onsemi.com 20 package dimensions xdfn4 1.0x1.0, 0.65p mx suffix case 711aj issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.20 mm from the terminal tips. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 bottom view b e 4x note 3 2x 0.05 c pin one reference top view 2x 0.05 c a a1 (a3) 0.05 c 0.05 c c seating plane side view l 4x 1 2 dim min max millimeters a 0.33 0.43 a1 0.00 0.05 a3 0.10 ref b 0.15 0.25 d 1.00 bsc d2 0.43 0.53 e 1.00 bsc e 0.65 bsc l 0.20 0.30 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. mounting footprint* 1.20 0.26 0.24 4x dimensions: millimeters 0.39 recommended package outline note 4 e/2 d2 45 a m 0.05 b c 4 3 0.65 pitch detail a 4x b2 0.02 0.12 l2 0.07 0.17 4x 0.52 2x 0.11 4x l2 4x detail a b2 4x on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncv8170/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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